Infineon IRFB4610PBF

Name: Infineon IRFB4610PBF
Brand: Infineon
SKU: IRFB4610PBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 11MILLIOHMS; Id 73A; TO-220AB; Pd 190W; -55DEG

$ 2.16

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Arrow Electronics	IRFB4610PBF	9	1		2.454	2.454	2.454	2.454	2.454
Rochester Electronics	IRFB4610PBF	3,698					1.310	1.090	0.969	11h
RS (Formerly Allied Electronics)	IRFB4610PBF	0	2	Bulk		2.260	2.160	2.160	2.160	2h
Farnell	IRFB4610PBF	1	1		3.857*	3.857*	3.857*	3.857*	3.857*	11h
Microchip USA	IRFB4610PBF	200	150	Tube				19.695	19.695	6d

Inventory History

3 month trend: +20.98%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB4610PBF.

Farnell

Datasheet11 pages15 years ago

Newark

TME

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+20.98%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFB4610PBF

InfineonAUIRFB4610

Price @ 1000

$ 2.16

$ 0.8

Stock

903,304

131,936

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

73 A

Threshold Voltage

4 V

2 V

Rds On Max

14 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

190 W

Input Capacitance

3.55 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-10-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

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Descriptions

Descriptions of Infineon IRFB4610PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 11Milliohms;ID 73A;TO-220AB;PD 190W;-55deg

RS (Formerly Allied Electronics)

Single N-Channel 100 V 14 mOhm 90 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 73A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 190 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, 100V, TO-220; Transistor type:MOSFET; Voltage, Vds typ:100V; Current, Id cont:73A; Resistance, Rds on:11mohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4V; Case style:TO-220 (SOT-78B); Capacitance, Ciss RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon