Infineon IRF1324S-7PPBF

Name: Infineon IRF1324S-7PPBF
Brand: Infineon
SKU: IRF1324S-7PPBF

24V Single N-Channel HEXFET Power MOSFET in a Lead Free 7-Lead D2-Pak package, D2PAK7P, RoHS

$ 8.75

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF1324S-7PPBF	0	200	Bulk				8.750	7.170	22h
Farnell		IRF1324S-7PPBF	0	1		4.410*	4.410*	3.512*	2.913*	2.913*	5h
Component Stockers USA		IRF1324S-7PPBF	23,309			3.200	3.140	3.040	2.950	2.950	2d
Win Source		WS-IRF1324S-7PPBF	20	10			5.455	3.636	3.636	3.636	7h
Worldway Electronics	2	IRF1324S7PPBF	19,103	7							6h

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1324S-7PPBF.

IHS

Datasheet10 pages10 years ago

Datasheet10 pages12 years ago

Newark

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iiiC

RS (Formerly Allied Electronics)

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF1324S-7PPBF

International RectifierAUIRF1324STRL7P

Price @ 1000

$ 8.75

$ 2.32

Stock

155,809

49,362

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

TO-263-3

Drain to Source Voltage (Vdss)

24 V

Continuous Drain Current (ID)

240 A

Threshold Voltage

4 V

Rds On Max

1 mΩ

1.65 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

7.7 nF

7.59 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-10-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-12-02

LTD Date2017-09-02

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Descriptions

Descriptions of Infineon IRF1324S-7PPBF provided by its distributors.

24V Single N-Channel HEXFET Power MOSFET in a Lead Free 7-Lead D2-Pak package, D2PAK7P, RoHS

Infineon SCT

MOSFET, Power;N-Ch;VDSS 24V;RDS(ON) 0.8Milliohm;ID 429A;D2Pak;PD 300W;VGS +/-20

RS (Formerly Allied Electronics)

Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 300 W

Distrelec

Trans MOSFET N-CH 24V 429A 7-Pin(6+Tab) D2PAK Tube

Verical

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

HEXFET POWER MOSFET Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N D2-PAK/7; Transistor Polarity:N Channel; Continuous Drain Current Id:429A; Drain Source Voltage Vds:24V; On Resistance Rds(on):1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:230mJ; Current Id Max:429A; Fall Time tf:93ns; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:1640A; Rate of Voltage Change dv / dt:1.6V/ns; Rise Time:240ns; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Voltage Vds:24V; Voltage Vds Typ:24V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

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