Infineon IPW65R110CFDAFKSA1

Trans MOSFET N-CH 650V 31.2A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
$ 3.704
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPW65R110CFDAFKSA1.

IHS

Datasheet16 pages14 years ago

Inventory History

3 month trend:
-1.00%

CAD Models

Download Infineon IPW65R110CFDAFKSA1 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
EE Concierge
SymbolFootprint
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

Price @ 1000
$ 3.704
$ 3.44
Stock
167,141
387,732
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-247
TO-247
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
31.2 A
31.2 A
Threshold Voltage
-
-
Rds On Max
110 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
277.8 W
277.8 W
Input Capacitance
3.24 nF
-

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-23
Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

278W 20V 2.5V 127nC@ 10V 1N 650V 99m¦¸@ 10V 38A 2.78nF@ 100V TO-247 16.13mm*5.21mm*21.1mm
STMicroelectronicsSTW45N65M5
N-channel 650 V, 0.067 Ohm typ., 35 A, MDmesh M5 Power MOSFET in TO-247 package
STMicroelectronicsSTW40N65M2
N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package
Power MOSFET, N Channel, 560 V, 32 A, 0.11 ohm, TO-247, Through Hole
Power MOSFET, N Channel, 650 V, 24 A, 0.084 ohm, TO-247, Through Hole
STMicroelectronicsSTW36N55M5
N-channel 550 V, 0.06 Ohm, 33 A, MDmesh(TM) V Power MOSFET in TO-247 package

Descriptions

Descriptions of Infineon IPW65R110CFDAFKSA1 provided by its distributors.

Trans MOSFET N-CH 650V 31.2A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
N-Channel 650 V 31.2 A 277.8 W 110 mOhm Through Hole Mosfet - PG-TO247-3
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Svhc:No Svhc (12-Jan-2017) Rohs Compliant: Yes |Infineon Technologies IPW65R110CFDAFKSA1
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
MOSFET, N-CH, AEC-Q101, 650V, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 31.2A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.099ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPW65R110CFDA
  • SP000895236