STMicroelectronics STW40N65M2
$ 3.715
Production
Inventory History
3 month trend: -24.34%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW40N65M2.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-02-10
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
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Descriptions
Descriptions of STMicroelectronics STW40N65M2 provided by its distributors.
N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package
Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STW40N65M2 N-CHANNEL MOSFET TRANSISTOR, 32 A, 650 V, 3-PIN TO-247
STMicroelectronics NChannel EnhancedMOSTube MDmesh M2series, Vds=650 V, 32 A, TO-247encapsulation, Through hole mounting, 3Pin
MOSFET, N-CH, 650V, 32A, 250W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -24.34%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Drain to Source Resistance99 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.355 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage650 V
Number of Elements1
Rds On Max99 mΩ
Schedule B8541290080
Turn-Off Delay Time96.5 ns
Turn-On Delay Time15 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW40N65M2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant