Infineon IPW65R110CFDFKSA1

Name: Infineon IPW65R110CFDFKSA1
Brand: Infineon
SKU: IPW65R110CFDFKSA1

650V 31.2A 110mΩ@10V, 12.7A 277.8W 4.5V@1.3mA 1 N-Channel TO-247-3 MOSFETs ROHS

$ 3.44

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPW65R110CFDFKSA1	26,660					3.850	3.440	3.240	15h
Farnell		IPW65R110CFDFKSA1	0	1		9.188*	7.601*	6.296*	6.040*	6.040*	1h
Component Stockers USA		IPW65R110CFDFKSA1	86			7.790	6.600	6.600	6.600	6.600	>1wk
Weyland Electronics Group Pte. Ltd.		IPW65R110CFD	2,674	1	Tape & Reel	1.307	1.307	1.307	1.307	1.307	1d
Win Source	2	WS-IPW65R110CFD	39,000	24				1.902	1.636	1.636	16h

Inventory History

3 month trend: +1.83%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPW65R110CFDFKSA1.

IHS

Datasheet20 pages14 years ago

Inventory History

3 month trend:

+1.83%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPW65R110CFDFKSA1

InfineonIPW65R110CFDAFKSA1

Price @ 1000

$ 3.44

$ 3.704

Stock

387,732

167,141

Authorized Distributors

Mount

Through Hole

Case/Package

TO-247

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

31.2 A

Threshold Voltage

Rds On Max

110 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

277.8 W

Input Capacitance

3.24 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-06-15

Lifecycle StatusProduction (Last Updated: 5 months ago)

LTB Date2023-08-31

LTD Date2024-02-29

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Descriptions

Descriptions of Infineon IPW65R110CFDFKSA1 provided by its distributors.

650V 31.2A 110mΩ@10V,12.7A 277.8W 4.5V@1.3mA 1 N-Channel TO-247-3 MOSFETs ROHS

ODG (Origin Data Global)

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Semicontronic

MOSFET, N CH, 700V, 31.2A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 31.2A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.09; Available until stocks are exhausted Alternative available

Farnell

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon