Infineon IPW65R110CFDFKSA1

Name: Infineon IPW65R110CFDFKSA1
Brand: Infineon
SKU: IPW65R110CFDFKSA1

650V 31.2A 110mΩ@10V, 12.7A 277.8W 4.5V@1.3mA 1 N-Channel TO-247-3 MOSFETs ROHS

$ 3.44

Production

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

10h

Component Stockers USA

IPW65R110CFDFKSA1

USD

7.790

6.600

Weyland Electronics Group Pte. Ltd.

IPW65R110CFD

861

Tape & Reel

USD

10h

USD

11h

Tube

USD

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPW65R110CFDFKSA1.

IHS

Datasheet20 pages14 years ago

Inventory History

3 month trend:

+0.00%

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Alternate Parts

This Part

Alternate Parts

InfineonIPW65R110CFDFKSA1

InfineonIPW65R110CFDAFKSA1

Price @ 1000

$ 3.44

$ 3.58

Stock

362,525

200,758

Authorized Distributors

Mount

Through Hole

Case/Package

TO-247

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

31.2 A

Threshold Voltage

Rds On Max

110 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

277.8 W

Input Capacitance

3.24 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-06-15

Lifecycle StatusProduction (Last Updated: 7 months ago)

LTB Date2023-08-31

LTD Date2024-02-29

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Descriptions

Descriptions of Infineon IPW65R110CFDFKSA1 provided by its distributors.

650V 31.2A 110mΩ@10V,12.7A 277.8W 4.5V@1.3mA 1 N-Channel TO-247-3 MOSFETs ROHS

ODG (Origin Data Global)

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Semicontronic

277.8W 20V 4.5V 118nC@ 10V 1individualNChannel 700V 110mΩ@ 10V 31.2A 3.24nF@ 100V TO-247-3 Through hole mounting 16.13mm*5.21mm*21.1mm

UnikeyIC

MOSFET, N CH, 700V, 31.2A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 31.2A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.09; Available until stocks are exhausted Alternative available

Farnell

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon