Infineon IPW65R095C7XKSA1

Name: Infineon IPW65R095C7XKSA1
Brand: Infineon
SKU: IPW65R095C7XKSA1

Power MOSFET, N Channel, 650 V, 24 A, 0.084 ohm, TO-247, Through Hole

$ 3.11

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Distributor		SKU		Min	Pkg
Newark		IPW65R095C7XKSA1	564	1		7.190	4.750	4.160	4.130	4.130
Arrow Electronics	2	IPW65R095C7XKSA1	320	1		8.640	8.640	4.946	4.133	4.133
DigiKey		448-IPW65R095C7XKSA1-ND	228	1	Tube	7.190	7.190	4.116	2.944	2.720
Rochester Electronics		IPW65R095C7XKSA1	4,560								23h
Future Electronics	2	IPW65R095C7XKSA1	0	30	Tube			3.290	3.170	3.110

Inventory History

3 month trend: -4.06%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet15 pages0 years ago

Inventory History

3 month trend:

-4.06%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-10-11

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IPW65R095C7XKSA1 provided by its distributors.

Power MOSFET, N Channel, 650 V, 24 A, 0.084 ohm, TO-247, Through Hole

EBV Elektronik

Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

IHS

MOSFET, N-CH, 650V, 24A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.084ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

Farnell

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Infineon