STMicroelectronics STW38N65M5
$ 3.72
Production
Inventory History
3 month trend: -24.36%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of STMicroelectronics STW38N65M5 provided by its distributors.
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-247 package
N-Channel 710 V 190 W 0.095 Ohm Flange Mount Mdmesh V Mosfet - TO-247
STW38N65M5 N-CHANNEL MOSFET TRANSISTOR, 30 A, 710 V, 3-PIN TO-247
Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Mosfet, N-Ch, 650V, 30A, To-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes |Stmicroelectronics STW38N65M5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -24.36%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max95 mΩ
Resistance95 mΩ
Rise Time9 ns
Turn-Off Delay Time66 ns
Turn-On Delay Time66 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant