STMicroelectronics STW34N65M5
$ 3.27
Obsolete
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SKU
Min
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW34N65M5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-23
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2025-09-29
LTD Date2026-03-29
Related Parts
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InfineonIPW65R110CFDAFKSA1
N-Channel 650 V 31.2 A 277.8 W 110 mOhm Through Hole Mosfet - PG-TO247-3
InfineonIPW65R095C7XKSA1
Power MOSFET, N Channel, 650 V, 24 A, 0.084 ohm, TO-247, Through Hole
Descriptions
Descriptions of STMicroelectronics STW34N65M5 provided by its distributors.
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-247 package
STW34N65M5 N-CHANNEL MOSFET TRANSISTOR, 28 A, 710 V, 3-PIN TO-247
Power Field-Effect Transistor, 28A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
STMicroelectronics NChannel EnhancedMOSTube MDmesh M5series, Vds=710 V, 28 A, TO-247encapsulation, Through hole mounting, 3Pin
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.7 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max110 mΩ
Resistance110 mΩ
Schedule B8541290080
Turn-Off Delay Time59 ns
Turn-On Delay Time59 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW34N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant