STMicroelectronics STW34N65M5
$ 3.195
Obsolete
Inventory History
3 month trend: -2.23%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW34N65M5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-09-29
LTD Date2026-03-29
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Descriptions
Descriptions of STMicroelectronics STW34N65M5 provided by its distributors.
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-247 package
STW34N65M5 N-CHANNEL MOSFET TRANSISTOR, 28 A, 710 V, 3-PIN TO-247
Trans MOSFET N-CH 650V 28A 3-Pin(3+Tab) TO-247 Tube
Hv Mosfet Mdmesh |Stmicroelectronics STW34N65M5
STMicroelectronics NMOS MDmesh M5, Vds=710 V, 28 A, TO-247, , 3
Power Field-Effect Transistor, 28A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
650V 28A 90m´Î@10V14A 190W 4V@250uA 6.3pF@100V N Channel 2.7nF@100V 62.5nC@10V +150¡Í@(Tj) TO-247-3 MOSFETs ROHS
Power MOSFETs, 650V, 29A, TO-247, Tube
STMicroelectronics SCT
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -2.23%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.7 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max110 mΩ
Resistance110 mΩ
Schedule B8541290080
Turn-Off Delay Time59 ns
Turn-On Delay Time59 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW34N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant