Infineon IPD200N15N3GATMA1
$ 1.056
Production
Inventory History
3 month trend: -15.40%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD200N15N3GATMA1.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
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InfineonIRFR4615PBF
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
Descriptions
Descriptions of Infineon IPD200N15N3GATMA1 provided by its distributors.
OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Power MOSFET, N Channel, 150 V, 50 A, 0.016 ohm, TO-252 (DPAK), Surface Mount
Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) DPAK
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
MOSFET, N CH, 50A, 150V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -15.40%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.82 nF
Max Dual Supply Voltage150 V
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance20 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation150 W
Rds On Max20 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time14 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD200N15N3GATMA1.
Compliance
Environmental Classification
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Compliance Statements