Infineon IRFR4615TRLPBF
$ 0.681
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR4615TRLPBF | 33,000 | 3K | 1d | ||||||||
| Newark | IRFR4615TRLPBF | 4,140 | 5 | Cut Tape | ||||||||
| Future Electronics | IRFR4615TRLPBF | 270,000 | 3K | Tape & Reel | ||||||||
| Arrow Electronics | IRFR4615TRLPBF | 1,060 | 1 | |||||||||
| Rutronik | TMOS3671 | 12,000 | 3K | 15h |
Inventory History
3 month trend: +10.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFR4615TRLPBF.
CAD Models
Download Infineon IRFR4615TRLPBF symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | Download | |
 EE Concierge | SymbolFootprint | ||
 SnapEDA | Footprint | Download |
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.681
$ 2.05
Stock
2,057,146
1,212,453
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
33 A
33 A
Threshold Voltage
5 V
5 V
Rds On Max
42 mΩ
42 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
144 W
144 W
Input Capacitance
1.75 nF
1.75 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
InfineonIRFR4615PBF
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
InfineonAUIRFR4615
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Descriptions
Descriptions of Infineon IRFR4615TRLPBF provided by its distributors.
N CH POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Conti
Single N-Channel 150V 42 mOhm 26 nC HEXFET® Power Mosfet - TO-252-3
Power MOSFET, N Channel, 150 V, 33 A, 0.034 ohm, TO-252 (DPAK), Surface Mount
Trans MOSFET N-CH 150V 33A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 150V 33A DPAK
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL POWER MOSFET, HEXFET, 150V, 33; N CHANNEL POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drai; Available until stocks are exhausted Alternatives available
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +10.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance42 mΩ
Package Quantity3000
Power Dissipation144 W
Rds On Max42 mΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time25 ns
Turn-On Delay Time15 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFR4615TRLPBF.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements