Infineon IRFR4615PBF

Name: Infineon IRFR4615PBF
Brand: Infineon
SKU: IRFR4615PBF

Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED

$ 2.05

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR4615PBF	0	5	Bulk		2.330	2.050	2.050	2.050	21h
Farnell	IRFR4615PBF	0	5			1.667*	1.206*	0.816*	0.798*	8h
Win Source	WS-IRFR4615PBF	808,320	135					0.304	0.292	9h
Worldway Electronics	IRFR4615PBF	15,858	7	Tube		0.098	0.095	0.090	0.090	8h
Fly-Wing Technology	IRFR4615PBF	216,835			0.739	0.606	0.587	0.549	0.549	2d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR4615PBF.

element14 APAC

Datasheet11 pages13 years ago

Datasheet11 pages16 years ago

IHS

iiiC

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFR4615PBF

InfineonIRFR4615TRLPBF

Price @ 1000

$ 2.05

$ 0.681

Stock

1,212,453

2,057,146

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

33 A

Threshold Voltage

5 V

Rds On Max

42 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

144 W

Input Capacitance

1.75 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-18

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFR4615PBF provided by its distributors.

Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED

Infineon

Single N-Channel 150 V 42 mOhm 26 nC HEXFET® Power Mosfet - DPAK

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 33A 3-Pin(2+Tab) DPAK Bulk/Tube

Verical

Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH 150V 33A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Package / Case:D-PAK; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC