Infineon IPB65R110CFDATMA1

Name: Infineon IPB65R110CFDATMA1
Brand: Infineon
SKU: IPB65R110CFDATMA1

Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R

$ 3.06

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPB65R110CFDATMA1	578,730					3.420	3.060	2.880	5h
Farnell	2	IPB65R110CFDATMA1	0	1	Cut Tape	5.852*	5.852*	4.480*	4.211*	4.211*	5h
Microchip USA		IPB65R110CFDATMA1	143	300					5.264	5.264	3d
Component Stockers USA		IPB65R110CFDATMA1	10,347			2.640	2.590	2.510	2.430	2.430	>1wk
Worldway Electronics		IPB65R110CFDATMA1	14,968	7	Tape & Reel		3.244	3.182	3.060	2.999	10h

Inventory History

3 month trend: +36.12%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB65R110CFDATMA1.

IHS

Datasheet20 pages14 years ago

TME

Inventory History

3 month trend:

+36.12%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPB65R110CFDATMA1

InfineonIPB65R110CFDAATMA1

Price @ 1000

$ 3.06

$ 2.951

Stock

2,545,601

932,998

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

31.2 A

Threshold Voltage

4 V

Rds On Max

110 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

277.8 W

Input Capacitance

3.24 nF

Supply Chain

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-06-15

Lifecycle StatusObsolete (Last Updated: 1 month ago)

LTB Date2023-08-31

LTD Date2024-02-29

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Descriptions

Descriptions of Infineon IPB65R110CFDATMA1 provided by its distributors.

Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N CH, 700V, 31.2A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 31.2A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.099ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V

Farnell

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon