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Infineon IPB65R110CFDATMA1

Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
$ 3.06
Obsolete
Datasheet
Manufacturer Page

Price and Stock

See all price breaks
Distributor
SKU
Min
Pkg
Bulk Pricing
Rochester Electronics
IPB65R110CFDATMA1
578,730
USD
3.420
3.060
2.880
19h
Microchip USA
IPB65R110CFDATMA1
279
300
USD
5.264
5.264
1d
Component Stockers USA
IPB65R110CFDATMA1
10,347
USD
2.640
2.590
2.510
2.430
2.430
6d
UnikeyIC
IPB65R110CFDATMA1
548,115
150
Tape & Reel
USD
3.999
3.969
20h
Worldway Electronics
IPB65R110CFDATMA1
5,953
7
Tape & Reel
USD
1.984
1.946
1.871
1.834
19h

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB65R110CFDATMA1.

IHS

Datasheet20 pages15 years ago

TME

Inventory History

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Alternate Parts

This Part
Alternate Parts
InfineonIPB65R110CFDATMA1
InfineonIPB65R110CFDAATMA1
Price @ 1000
$ 3.06
$ 3.077
Stock
2,334,992
666,507
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-263
TO-263
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
31.2 A
31.2 A
Threshold Voltage
4 V
-
Rds On Max
-
110 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
-
277.8 W
Input Capacitance
-
3.24 nF

Supply Chain

Country of OriginAustria, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-06-15
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2023-08-31
LTD Date2024-02-29

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Descriptions

Descriptions of Infineon IPB65R110CFDATMA1 provided by its distributors.

Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
Verical
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Semicontronic
277.8W(Tc) 20V 4.5V@1.3mA 118nC@ 10 V 1individualNChannel 650V 110mΩ@ 12.7A,10V 31.2A 3.24nF@100V TO-263 SMD mount 10mm*9.25mm*4.4mm
UnikeyIC
MOSFET, N CH, 700V, 31.2A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 31.2A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.099ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Farnell
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Infineon

Images

Farnell
TME
Farnell
Future Electronics
UTSource
Rochester Electronics

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPB65R110CFDATMA1.
  • SP000896400