Infineon IPB65R110CFDAATMA1

Name: Infineon IPB65R110CFDAATMA1
Brand: Infineon
SKU: IPB65R110CFDAATMA1

Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R

$ 3.073

Production

Datasheet

Manufacturer Page

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor

SKU

Min

Pkg

Bulk Pricing

Newark

IPB65R110CFDAATMA1

2,207

Cut Tape

USD

USD

IPB65R110CFDAATMA1CT-ND

1,682

Cut Tape

USD

USD

Tape & Reel

USD

3.120

3.080

Inventory History

3 month trend: -19.81%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB65R110CFDAATMA1.

element14 APAC

Datasheet16 pages14 years ago

Inventory History

3 month trend:

-19.81%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPB65R110CFDAATMA1

InfineonIPB65R110CFDATMA1

Price @ 1000

$ 3.073

$ 3.06

Stock

666,883

2,304,716

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

31.2 A

Threshold Voltage

4 V

Rds On Max

110 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

277.8 W

Input Capacitance

3.24 nF

Supply Chain

Country of OriginAustria, Germany, Malaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-05-23

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IPB65R110CFDAATMA1 provided by its distributors.

Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

N-Channel 650 V 31.2 A 277.8 W 110 mOhm Surface Mount Mosfet - PG-TO-263-3

Future Electronics

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

277.8W 20V 4.5V 118nC@ 10V 1individualNChannel 650V 110mΩ@ 10V 31.2A 3.24nF@ 100V TO-263 SMD mount，glue mount 10mm*9.25mm*4.4mm

UnikeyIC

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.

Infineon

MOSFET, N-CH, AEC-Q101, 650V, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 31.2A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.099ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs

Farnell