Infineon IPB65R110CFDAATMA1

Name: Infineon IPB65R110CFDAATMA1
Brand: Infineon
SKU: IPB65R110CFDAATMA1

Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R

$ 2.951

Production

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Price and Stock

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Distributor		SKU		Min	Pkg
Newark		IPB65R110CFDAATMA1	944	1	Cut Tape	6.510	4.460	3.250	2.650	2.650
Arrow Electronics	2	IPB65R110CFDAATMA1	959	1		5.512	4.273	3.295	3.295	3.295
DigiKey	3	IPB65R110CFDAATMA1CT-ND	1,692	1	Cut Tape	8.060	5.420	3.924	3.286	3.286
Avnet		IPB65R110CFDAATMA1	0	1K					2.943	2.641	9h
Future Electronics	2	IPB65R110CFDAATMA1	0	1K	Tape & Reel				2.990	2.950

Inventory History

3 month trend: -16.54%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB65R110CFDAATMA1.

IHS

Datasheet16 pages14 years ago

Inventory History

3 month trend:

-16.54%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPB65R110CFDAATMA1

InfineonIPB65R110CFDATMA1

Price @ 1000

$ 2.951

$ 3.06

Stock

932,998

2,545,601

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

31.2 A

Threshold Voltage

4 V

Rds On Max

110 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

277.8 W

Input Capacitance

3.24 nF

Supply Chain

Country of OriginAustria, Germany, Malaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-05-23

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPB65R110CFDAATMA1 provided by its distributors.

Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

N-Channel 650 V 31.2 A 277.8 W 110 mOhm Surface Mount Mosfet - PG-TO-263-3

Future Electronics

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.

Infineon

Mosfet, N-Ch, 650V, 31.2A, 0.2778W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IPB65R110CFDAATMA1

Newark