Infineon IKP15N60TXKSA1

Name: Infineon IKP15N60TXKSA1
Brand: Infineon
SKU: IKP15N60TXKSA1

Trans IGBT Chip N-CH 600V 26A 130mW Automotive 3-Pin(3+Tab) TO-220AB Tube

$ 0.862

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Arrow Electronics	IKP15N60TXKSA1	346	1		0.948	0.948	0.948	0.948	0.948
Avnet	IKP15N60TXKSA1	0	1K							15h
Farnell	IKP15N60TXKSA1	0	1		2.700*	1.867*	1.339*	0.911*	0.887*	13h
Mouser	726-IKP15N60T	6	1	Tube	2.410	1.490	1.060	0.776	0.729
Verical	IKP15N60TXKSA1	346	2			1.682	1.054	0.906	0.906

Inventory History

3 month trend: -88.99%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IKP15N60TXKSA1.

IHS

Datasheet13 pages10 years ago

element14 APAC

Farnell

Inventory History

3 month trend:

-88.99%

CAD Models

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Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-11-10

Lifecycle StatusObsolete (Last Updated: 3 weeks ago)

LTB Date2026-03-15

LTD Date2026-09-15

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Descriptions

Descriptions of Infineon IKP15N60TXKSA1 provided by its distributors.

Trans IGBT Chip N-CH 600V 26A 130mW Automotive 3-Pin(3+Tab) TO-220AB Tube

Verical

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

TodayComponents

IGBT, General Purpose, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3 Pins

EBV Elektronik

Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:15A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:130W; Power Dissipation Pd:130W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC

Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon