Infineon IGW30N60TFKSA1

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-247
$ 1.387
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IGW30N60TFKSA1.

IHS

Datasheet12 pages10 years ago
Datasheet12 pages10 years ago

Upverter

Farnell

Inventory History

3 month trend:
+3.52%

CAD Models

Download Infineon IGW30N60TFKSA1 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
EE Concierge
SymbolFootprint
SnapEDA
Footprint
Download
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

STMicroelectronicsSTGW20NC60VD
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
STMicroelectronicsSTGW30NC120HD
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
STMicroelectronicsSTGW30V60DF
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
650 V, 30 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
Trans IGBT Chip N=-CH 600V 45A 187000mW 3-Pin(3+Tab) TO-247 Tube

Descriptions

Descriptions of Infineon IGW30N60TFKSA1 provided by its distributors.

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-247
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247
IGBT, 30 A, 2.05 V, 187 W, 600 V, TO-247, 3 Pins
600 V IGBT in TO-247 package, PG-TO247-3, RoHS
Infineon SCT
IGBT Transistors LOW LOSS IGBT TECH 600V 30A
TO-247-3 IGBT Transistors / Modules ROHS
IGW30N60 - DISCRETE IGBT WITHOUT
IGBT TRENCH FS 600V 60A TO247-3
IGW30N60T Infineon Technologies
Hard-switching 600 V, 30 A TRENCHSTOP™ IGBT3 in TO-247 package for significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept.
IGBT,600V,30A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IGW30N60T
  • SP000054925