Infineon IHW30N65R5XKSA1

Name: Infineon IHW30N65R5XKSA1
Brand: Infineon
SKU: IHW30N65R5XKSA1

Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

$ 1.323

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Rochester Electronics	IHW30N65R5XKSA1	39,095					1.480	1.230	1.100	9h
DigiKey	IHW30N65R5XKSA1-ND	389	1	Tube	3.620	3.620	1.965	1.333	1.091
Newark	IHW30N65R5XKSA1	0	1		3.580	2.180	1.870	1.780	1.780
Avnet	IHW30N65R5XKSA1	0	480					1.231	1.091	2d
Arrow Electronics	IHW30N65R5XKSA1	0	240					1.323	1.271

Inventory History

3 month trend: -0.01%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IHW30N65R5XKSA1.

IHS

Datasheet15 pages0 years ago

TME

Inventory History

3 month trend:

-0.01%

CAD Models

Download Infineon IHW30N65R5XKSA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-06-01

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

Related Parts

InfineonIKW30N65WR5XKSA1

650 V, 30 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Details

onsemiNGTB35N65FL2WG

IGBT, 650V 35A FS2 Solar/UPS 650V/35A FAST IGBT FSII TO-247

Details

InfineonIKW30N65H5XKSA1

Trans IGBT Chip N-CH 650V 55A 188mW 3-Pin(3+Tab) TO-247 Tube

Details

STMicroelectronicsSTGW30H60DF

Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

Details

InfineonIHW50N65R5XKSA1

IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3

Details

STMicroelectronicsSTGW35HF60WDI

STGW35HF60WD Series 600 V 30 A Flange Mount Ultra Fast IGBT - TO-247

Details

Descriptions

Descriptions of Infineon IHW30N65R5XKSA1 provided by its distributors.

Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

IHS

Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS

Infineon SCT

Igbt, Single, 650V, 60A, To-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.35V; Power Dissipation:176W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IHW30N65R5XKSA1

Newark

The Reverse Conducting R5 650 V, 30 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for the demanding requirements of Induction Cooking applications. With a monolithically integrated diode, the 650 V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability

Infineon