Infineon IKW30N60TFKSA1

Name: Infineon IKW30N60TFKSA1
Brand: Infineon
SKU: IKW30N60TFKSA1

Trans IGBT Chip N=-CH 600V 45A 187000mW 3-Pin(3+Tab) TO-247 Tube

$ 1.936

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Distributor		SKU		Min	Pkg
Avnet	2	61M6734	33	1		4.360	2.410	1.980	1.880	1.880	2d
Newark		IKW30N60TFKSA1	192	1		4.360	2.410	1.980	1.880	1.880
Future Electronics		IKW30N60TFKSA1	960	240	Tube				2.510	2.470
Rochester Electronics		IKW30N60TFKSA1	14					1.800	1.610	1.510	5h
Arrow Electronics	2	IKW30N60TFKSA1	930	1		4.462	2.428	1.955	1.936	1.936

Inventory History

3 month trend: +35.39%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IKW30N60TFKSA1.

IHS

Datasheet13 pages11 years ago

Upverter

TME

Farnell

iiiC

Inventory History

3 month trend:

+35.39%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-14

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IKW30N60TFKSA1 provided by its distributors.

Trans IGBT Chip N=-CH 600V 45A 187000mW 3-Pin(3+Tab) TO-247 Tube

Verical

187W 60A 600V FS(Field Stop) TO-247-3-1 IGBT Transistors / Modules ROHS

EBEE

600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Infineon SCT

IGBT, N, 600V, 30A, TO-247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:187W; Power Dissipation Pd:187W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC

Hard-switching 600 V, 30 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon

Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

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