Infineon FZ1600R17HP4B2BOSA2

Name: Infineon FZ1600R17HP4B2BOSA2
Brand: Infineon
SKU: FZ1600R17HP4B2BOSA2

Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel

$ 932.398

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
DigiKey	448-FZ1600R17HP4B2BOSA2-ND	13	1	Tray	873.03	873.03	873.03	873.03	873.03
Newark	FZ1600R17HP4B2BOSA2	0	1		1,383	1,383	1,383	1,383	1,383
Avnet	FZ1600R17HP4B2BOSA2	0	2			991.76	932.40	932.40	932.40	19h
Arrow Electronics	FZ1600R17HP4B2BOSA2	0	2			952.70	924.40	896.95	879.10
Farnell	FZ1600R17HP4B2BOSA2	0	1		1,294*	1,294*	1,294*	1,294*	1,294*	16h

Inventory History

3 month trend: +44.44%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon FZ1600R17HP4B2BOSA2.

Infineon

Datasheet1 page12 years ago

IHS

_legacy Avnet

iiiC

Farnell

Inventory History

3 month trend:

+44.44%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonFZ1600R17HP4B2BOSA2

InfineonFZ1600R17HP4HOSA2

Price @ 1000

$ 932.398

$ 669.87

Stock

450,372

254,261

Authorized Distributors

Mount

Screw

Case/Package

Module

Collector Emitter Breakdown Voltage

1.7 kV

Max Collector Current

1.6 kA

Power Dissipation

10.5 kW

Collector Emitter Saturation Voltage

2.25 V

Reverse Recovery Time

Supply Chain

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-06-23

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon FZ1600R17HP4B2BOSA2 provided by its distributors.

Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel

IHS

Trans IGBT Module N-CH 1.7KV 1600A 7-pin IHMB130-1

EBV Elektronik

IGBT MOD 1700V 1600A A-IHV130-3

DigiKey

DIODE ARRAY SCHOTTKY 100V D2PAK

YIC International

2.25V@ 15V,1.6kA 1.6KA IHV-130A-3

UnikeyIC

1700V IHMB 130mm single switch IGBT Module with soft-switching Trench-IGBT4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. | Summary of Features: Extended Operation Temperature T(vj op); Enlarged Diode for regenerative operation; Low V(CEsat); 4kV AC 1min Insulation; AlSiC Base Plate for increasing Thermal Cycling Capability; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; UL recognised | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; traction; cav

Infineon

IGBT, ONE SWITCH, 1700V, 1600A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:1600A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:11kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:11kW

element14 APAC