Infineon FF800R17KP4B2NOSA2

Trans IGBT Module N-CH 1700V 1.2KA 4850000mW Automotive 10-Pin IHM130-1 Tray
$ 980.13
EOL
Manufacturer PageDatasheet

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DistributorSKUMinPkg
DigiKeyFF800R17KP4B2NOSA2-ND21Tray
AvnetFF800R17KP4B2NOSA202
6d
Arrow ElectronicsFF800R17KP4B2NOSA202
Mouser641-FF800R17KP4_B2151Tray
Microchip USAFF800R17KP4B2NOSA23735Tray
9h

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon FF800R17KP4B2NOSA2.

Infineon

Datasheet1 page11 years ago

IHS

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iiiC

Farnell

Inventory History

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Alternate Parts

This Part
Alternate Parts
InfineonFF800R17KP4B2NOSA2
InfineonFF800R17KP4B2NOSA2
Price @ 1000
$ 980.13
$ 980.13
Stock
89,073
89,073
Authorized Distributors
4
4
Mount
Screw
Screw
Case/Package
Module
Module
Collector Emitter Breakdown Voltage
1.7 kV
1.7 kV
Max Collector Current
1.2 kA
1.2 kA
Power Dissipation
1.2 MW
1.2 MW
Collector Emitter Saturation Voltage
2.2 V
2.2 V
Reverse Recovery Time
-
-

Supply Chain

Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-10
Lifecycle StatusEOL (Last Updated: 3 weeks ago)
LTB Date2027-04-15
LTD Date2027-12-15

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Descriptions

Descriptions of Infineon FF800R17KP4B2NOSA2 provided by its distributors.

Trans IGBT Module N-CH 1700V 1.2KA 4850000mW Automotive 10-Pin IHM130-1 Tray
Verical
Transistor IGBT Module N-CH 1700V 1200A 20V Screw Mount Tray
EBV Elektronik
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel
IHS
IGBT MOD 1700V 1200A A-IHV130-3
DigiKey
1700V IHM 130mm Dual IGBT Module with IGBT4, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications | Summary of Features: Low V(cesat); Enlarged Diode for regenerative operation; 4 kV AC 1min Insulation; AlSiC Base Plate for increased Thermal Cycling Capability; UL recognised; High Power and Thermal Cycling Capability | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav
Infineon
IGBT, DUAL MOD, 1700V, 800A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:4.85kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:4.85kW
element14 APAC

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Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • FF800R17KP4-B2
  • FF800R17KP4B2
  • FF800R17KP4_B2
  • SP000941492