Infineon FP75R12KE3BOSA1
$ 84.736
Production
Inventory History
3 month trend: +228%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon FP75R12KE3BOSA1.
CAD Models
Download Infineon FP75R12KE3BOSA1 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 EE Concierge | SymbolFootprint |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-04-26
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Related Parts
InfineonFS75R12W2T4BOMA1
Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount
InfineonFS50R12W2T4BOMA1
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
MicrochipAPTGT50A120T1G
Pm-Igbt-Tfs-Sp1 Rohs Compliant: Yes |Microchip Technology APTGT50A120T1G
Descriptions
Descriptions of Infineon FP75R12KE3BOSA1 provided by its distributors.
Infineon FP75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V AG-ECONO3-3, Panel Mount
Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray
EconoPIM™3 1200 V, 75 A three phase IGBT module with IGBT3 and NTC.
IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Collector Emitter Saturation Voltage Vce(on):2.3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor C
Igbt Module, 1200V, Econopim; Transistor, Polaridad:Canal N; Corriente De Colector Dc:105A; Tensión De Saturación Colector-Emisor Vce(On):2.3V; Disipación De Potencia Pd:350W; Tensión Colector Emisor V(Br)Ceo:1.2Kv |Infineon FP75R12KE3
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +228%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageModule
Contact PlatingTin
MountScrew
Number of Pins24
Number of Terminals35
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.15 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current105 A
Forward Current75 A
Max Collector Current105 A
Max Junction Temperature (Tj)125 °C
Max Operating Temperature125 °C
Max Power Dissipation350 W
Min Operating Temperature-40 °C
Number of Elements7
Package Quantity10
PolarityNPN
Power Dissipation355 W
Schedule B8541290080
Turn-Off Delay Time420 ns
Turn-On Delay Time260 ns
Dimensions
Height17.5 mm
Length122 mm
Width62 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon FP75R12KE3BOSA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements