Infineon BSB056N10NN3GXUMA1

Name: Infineon BSB056N10NN3GXUMA1
Brand: Infineon
SKU: BSB056N10NN3GXUMA1

2.8W(Ta), 78W(Tc) 20V 3.5V@ 100¦ÌA 74nC@ 10 V 1N 100V 5.6m¦¸@ 30A, 10V 9A, 83A 5.5nF@50V SON

$ 1.44

Production

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Distributor		SKU		Min	Pkg
Farnell	2	BSB056N10NN3GXUMA1	0	1	Cut Tape	3.726*	2.516*	2.516*	2.516*	2.516*	4h
Mouser		726-BSB056N10NN3G	776	1	Tape & Reel	3.890	2.540	1.850	1.440	1.340
Win Source	2	WS-BSB056N10NN3GXUMA1	29,000	7			8.115	5.410	5.410	5.410	19h
Worldway Electronics	4	BSB056N10NN3G	17,035	7	Tape & Reel		0.750	0.736	0.707	0.693	2d
Esaler Electronic		BSB056N10NN3GXUMA1	5,000			1.262	1.250	1.238	1.226	1.214	2d

Inventory History

3 month trend: -2.48%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

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Factory Futures

Datasheet13 pages14 years ago

Inventory History

3 month trend:

-2.48%

CAD Models

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Supply Chain

Country of OriginAustria, Mainland China, Malaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-03-10

Lifecycle StatusProduction (Last Updated: 1 month ago)

LTB Date2024-08-15

LTD Date2024-08-15

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Descriptions

Descriptions of Infineon BSB056N10NN3GXUMA1 provided by its distributors.

2.8W(Ta),78W(Tc) 20V 3.5V@ 100¦ÌA 74nC@ 10 V 1N 100V 5.6m¦¸@ 30A,10V 9A,83A 5.5nF@50V SON

Unikeyic (ICkey)

Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, MG-WDSON-2, RoHS

Infineon SCT

MOSFET, N CH, 100V, 83A, WDSON-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 83A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage ; Available until stocks are exhausted

Farnell

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon