Infineon IRLR120NPBF

Name: Infineon IRLR120NPBF
Brand: Infineon
SKU: IRLR120NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.185 Ohm; Id 10A; D-pak (TO-252AA); Pd 48W

$ 1.1

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR120NPBF	0	1	Bulk	1.240	1.100	1.100	1.100	1.100	20h
Farnell	IRLR120NPBF	0	5			0.833*	0.403*	0.323*	0.316*	6h
Win Source	WS-IRLR120NPBF	149,130	190					0.224	0.207	7h
Worldway Electronics	IRLR120NPBF	18,879	7	Tube		0.075	0.073	0.069	0.069	6h
Fly-Wing Technology	IRLR120NPBF	131,333			0.269	0.220	0.214	0.200	0.200	5h

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR120NPBF.

IHS

Datasheet12 pages11 years ago

Newark

TME

RS (Formerly Allied Electronics)

iiiC

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRLR120NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W

RS (Formerly Allied Electronics)

Transistor MOSFET Negative Channel 100 Volt 10A 3-Pin(2+Tab) DPAK

Jameco

Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

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100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):185mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:10A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Power Dissipation Ptot Max:48W; Pulse Current Idm:35A; SMD Marking:IRLR120NPBF; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V

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