Infineon AUIRF3805

Name: Infineon AUIRF3805
Brand: Infineon
SKU: AUIRF3805

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

$ 1.47

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	AUIRF3805	48,443					1.640	1.470	1.380	5h
RS (Formerly Allied Electronics)		AUIRF3805	0	1	Bulk	7.670	6.750	6.750	6.750	6.750	19h
Farnell		AUIRF3805	0	1		2.307*	2.307*	2.307*	2.307*	2.307*	5h
HQonline		DS0089945	10	1		2.293	1.852	1.411	1.411	1.411	>1w
Microchip USA		AUIRF3805	300	600	Bulk				1.728	1.728	7d

Inventory History

3 month trend: -14.29%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRF3805.

IHS

Datasheet13 pages8 years ago

Datasheet15 pages15 years ago

Infineon SCT

Farnell

Inventory History

3 month trend:

-14.29%

Alternate Parts

This Part

Alternate Parts

InfineonAUIRF3805

InfineonIRF3805PBF

Price @ 1000

$ 1.47

$ 1.95

Stock

324,828

769,219

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

TO-220-3

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

160 A

75 A

Threshold Voltage

2 V

4 V

Rds On Max

3.3 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

130 W

Input Capacitance

7.96 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-07-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon AUIRF3805 provided by its distributors.

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

Infineon SCT

Single N-Channel 55 V 3.3 mOhm 290 nC Automotive HEXFET® Power Mosfet - TO-220-3

Future Electronics

Trans MOSFET N-CH 55V 210A Automotive 3-Pin(3+Tab) TO-220AB Tube

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Infineon

MOSFET,N CH,55V,160A,TO220AB; Continuous Drain Current Id:210A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-2220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V

element14 APAC