STMicroelectronics STP185N55F3
$ 3.095
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-7513-5-ND | 2 | 1K | Tube | ||||||||
| Microchip USA | STP185N55F3 | 108 | 600 | Tray | 19h | |||||||
| Component Stockers USA | STP185N55F3 | 2,151 | >1wk | |||||||||
| Win Source | WS-STP185N55F3 | 63,600 | 18 | 4h | ||||||||
| Worldway Electronics | STP185N55F3 | 22,173 | 7 | Tube | 2h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP185N55F3.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-01
LTD Date2023-04-01
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Descriptions
Descriptions of STMicroelectronics STP185N55F3 provided by its distributors.
N-channel 55 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
Trans MOSFET N-CH 55V 120A 3-Pin(3+Tab) TO-220 Tube
Single N-Channel 55 V 3.8 mOhm 100 nC 330 W Silicon Flange Mount Mosfet TO-220-3
Power Field-Effect Transistor, 120A I(D), 55V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.8 nF
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation315 W
Rds On Max3.8 mΩ
Rise Time150 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time25 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP185N55F3.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant