Infineon AUIRF3710ZS

Name: Infineon AUIRF3710ZS
Brand: Infineon
SKU: AUIRF3710ZS

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

$ 1.73

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Rochester Electronics	AUIRF3710ZS	3,405					1.930	1.730	1.620	5h
RS (Formerly Allied Electronics)	AUIRF3710ZS	0	3K	Bulk					3.250	18h
Farnell	AUIRF3710ZS	0	1		3.135*	2.342*	1.776*	1.386*	1.386*	5h
Win Source	WS-AUIRF3710ZS	9	9			6.165	4.110	4.110	4.110	6h
Worldway Electronics	AUIRF3710ZS	18,927	7	Tube		0.767	0.753	0.724	0.710	1d

Inventory History

3 month trend: -25.62%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRF3710ZS.

IHS

Datasheet14 pages16 years ago

Inventory History

3 month trend:

-25.62%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRF3710ZS

InfineonIRF3710ZSTRLPBF

Price @ 1000

$ 1.73

$ 0.821

Stock

70,064

479,994

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

59 A

Threshold Voltage

2 V

Rds On Max

18 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

160 W

Input Capacitance

2.9 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-03-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2021-08-15

LTD Date2022-02-15

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Descriptions

Descriptions of Infineon AUIRF3710ZS provided by its distributors.

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

SHENGYU ELECTRONICS

Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK Tube

UnikeyIC

HEXFET POWER MOSFET Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Infineon

MOSFET, N CH, 100V, 59A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:59A; Power Dissipation Pd:160W; Voltage Vgs Max:20V

element14 APAC