Infineon IRF3710ZSTRLPBF

Name: Infineon IRF3710ZSTRLPBF
Brand: Infineon
SKU: IRF3710ZSTRLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 14MILLIOHMS; Id 59A; D2PAK; Pd 160W; Vgs +/-20

$ 0.821

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	32AC7469	12	1		2.850	1.960	1.610	1.610	1.610	3d
Newark	2	IRF3710ZSTRLPBF	698	1	Cut Tape	2.850	1.970	1.450	1.450	1.450
Future Electronics	2	IRF3710ZSTRLPBF	23,200	800	Tape & Reel				0.785	0.740
Arrow Electronics	3	IRF3710ZSTRLPBF	800	1		2.227	1.528	1.083	0.736	0.736
Rochester Electronics	2	IRF3710ZSTRLPBF	1,915					0.982	0.815	0.727	23h

Inventory History

3 month trend: -6.43%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3710ZSTRLPBF.

Newark

Datasheet12 pages15 years ago

Datasheet13 pages22 years ago

IHS

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-6.43%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF3710ZSTRLPBF

InfineonAUIRF3710ZS

Price @ 1000

$ 0.821

$ 1.73

Stock

405,387

59,097

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

59 A

Threshold Voltage

2 V

Rds On Max

18 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

160 W

Input Capacitance

2.9 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2002-05-10

Lifecycle StatusEOL (Last Updated: 4 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRF3710ZSTRLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;D2Pak;PD 160W;VGS +/-20

RS (Formerly Allied Electronics)

Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 59A 3-Pin (2+Tab) D2PAK T/R

Verical

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF3710ZSTRLPBF.

Newark