Infineon IRFS4510TRLPBF

Name: Infineon IRFS4510TRLPBF
Brand: Infineon
SKU: IRFS4510TRLPBF

Single N-Channel 100V 13.9 mOhm 58 nC HEXFET® Power Mosfet - D2PAK

$ 1.057

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRFS4510TRLPBF	425	1		2.598	1.808	1.321	1.321	1.321
Rochester Electronics	2	IRFS4510TRLPBF	6,245					1.230	1.020	0.910	18h
DigiKey		448-IRFS4510TRLPBFTR-ND	1,600	800	Tape & Reel				1.095	0.909
RS (Formerly Allied Electronics)		IRFS4510TRLPBF	0	5	Bulk		3.600	3.170	3.170	3.170	9h
Farnell	3	IRFS4510TRLPBF	244	1	Cut Tape	3.101*	2.000*	1.477*	1.477*	1.477*	18h

Inventory History

3 month trend: +11.58%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS4510TRLPBF.

Newark

Datasheet10 pages14 years ago

IHS

Inventory History

3 month trend:

+11.58%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS4510TRLPBF

InfineonIRFS4510PBF

Price @ 1000

$ 1.057

$ 6.97

Stock

247,429

28,919

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

61 A

Threshold Voltage

2 V

3 V

Rds On Max

13.9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

3.18 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2012-04-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

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Descriptions

Descriptions of Infineon IRFS4510TRLPBF provided by its distributors.

Single N-Channel 100V 13.9 mOhm 58 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; On Resistance Rds(On):0.0113Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes

Newark

MOSFET, N-CH, 100V, 64A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0113ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

Farnell