Diodes Inc. BSS8402DW-7-F

Name: Diodes Inc. BSS8402DW-7-F
Brand: Diodes Inc.
SKU: BSS8402DW-7-F

Transistor: P-MOSFET; unipolar; -60V; -115mA; 13.5ohm; 200mW; -55+150 deg.C; SMD; SOT363(SC88)

$ 0.144

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		BSS8402DW-7-F	69,000	3K						0.081	6h
Newark	3	BSS8402DW-7-F	5,316	5	Cut Tape		0.434	0.288	0.204	0.204
DigiKey	3	BSS8402DW-FDICT-ND	24,143	1	Cut Tape	0.550	0.338	0.215	0.144	0.144
Verical	2	BSS8402DW-7-F	515,500	475					0.144	0.105
Arrow Electronics	2	BSS8402DW-7-F	1,483	183					0.544	0.544

Inventory History

3 month trend: -63.84%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. BSS8402DW-7-F.

IHS

Datasheet8 pages6 years ago

Diodes Inc SCT

element14 APAC

Newark

iiiC

Inventory History

3 month trend:

-63.84%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.BSS8402DW-7-F

Diodes Inc.BSS8402DWQ-7

Price @ 1000

$ 0.144

$ 0.22

Stock

5,464,531

5,044,447

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-363

Drain to Source Voltage (Vdss)

-50 V

50 V

Continuous Drain Current (ID)

115 mA

Threshold Voltage

2.5 V

Rds On Max

7.5 Ω

13.5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 mW

Input Capacitance

50 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-05-06

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of Diodes Inc. BSS8402DW-7-F provided by its distributors.

Transistor: P-MOSFET; unipolar; -60V; -115mA; 13.5ohm; 200mW; -55+150 deg.C; SMD; SOT363(SC88)

Maritex

Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A 6-Pin SOT-363 T/R / MOSFET N/P-CH 60V/50V SC70-6

Win Source

Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 130 mA, 13.5 ohm

Avnet

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):13.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V;

element14 APAC