Diodes Inc. 2N7002DW-7-F

Name: Diodes Inc. 2N7002DW-7-F
Brand: Diodes Inc.
SKU: 2N7002DW-7-F

Transistor MOSFET Array Dual N-CH 60V 0.23A 6-Pin SOT-363 T/R

$ 0.073

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		2N7002DW-7-F	563	1	Bulk	0.030	0.030	0.030	0.030	0.030	3h
Verical		2N7002DW-7-F	2,000	216					0.033	0.033
Arrow Electronics		2N7002DW-7-F	2,000	1		0.289	0.178	0.112	0.073	0.073
TME	2	2N7002DW-7-F	1,380	1		0.275	0.199	0.113	0.068	0.048	4h
Newark	2	2N7002DW-7-F	0	5	Cut Tape		0.192	0.125	0.086	0.086

Inventory History

3 month trend: -7.26%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. 2N7002DW-7-F.

Newark

Datasheet6 pages4 years ago

Datasheet5 pages12 years ago

Upverter

Future Electronics

Diodes Inc SCT

element14 APAC

Inventory History

3 month trend:

-7.26%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.2N7002DW-7-F

onsemi2N7002DW

Price @ 1000

$ 0.073

$ 0.132

Stock

49,159,828

3,627,502

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-363

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

115 mA

Threshold Voltage

2 V

1.76 V

Rds On Max

7.5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

310 mW

200 mW

Input Capacitance

50 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-02-26

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. 2N7002DW-7-F provided by its distributors.

Transistor MOSFET Array Dual N-CH 60V 0.23A 6-Pin SOT-363 T/R

Avnet Japan

2N7002DW Series 60 V 7.5 Ohm Dual N-Channel Enhancement Mode Transistor SOT-363

Future Electronics

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N CH, 60V, 0.115A, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):13.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:

element14 APAC

Mosfet, N Channel, Dual, 60 V, 800Ma, Sot-363; Transistor, Polaridad:Canal N Dual; Intensidad Drenador Continua Id:800Ma; Tensión Drenaje-Fuente Vds:60V; Resistencia De Activación Rds(On):13.5Ohm; Tensión Vgs De Medición Rds(On):10V |Diodes Inc. 2N7002DW-7-F

Newark