Diodes Inc. BSS123TA

Name: Diodes Inc. BSS123TA
Brand: Diodes Inc.
SKU: BSS123TA

BSS123 Series 100 V 6 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23

$ 0.134

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
DigiKey	3	BSS123CT-ND	12,874	1	Cut Tape	0.520	0.317	0.201	0.134	0.098
Avnet		BSS123TA	6,000	3K						0.059	2h
Newark	3	BSS123TA	13	5	Cut Tape		0.316	0.207	0.145	0.145
Arrow Electronics		BSS123TA	3,000	3K						0.082
Verical		BSS123TA	3,000	3K						0.070

Inventory History

3 month trend: -16.09%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. BSS123TA.

Diodes Inc SCT

Technical Drawing5 pages9 years ago

IHS

Future Electronics

Newark

Inventory History

3 month trend:

-16.09%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.BSS123TA

onsemiBSS123LT1G

Price @ 1000

$ 0.134

$ 0.075

Stock

1,358,070

79,327,002

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

170 mA

Threshold Voltage

1.4 V

800 mV

Rds On Max

6 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

360 mW

225 mW

Input Capacitance

20 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1992-02-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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InfineonBSS169H6327XTSA1

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Descriptions

Descriptions of Diodes Inc. BSS123TA provided by its distributors.

BSS123 Series 100 V 6 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23

Future Electronics

Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R

Verical

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET,N CH,100V,0.17A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170mA; Power Dissipation Pd:300mW; Voltage Vgs Max:20V

element14 APAC