Vishay SIA413DJ-T1-GE3
$ 0.465
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SIA413DJ-T1-GE3 | 30,000 | 3K | 5h | ||||||||
| Arrow Electronics | SIA413DJ-T1-GE3 | 1 | 1 | |||||||||
| DigiKey | SIA413DJ-T1-GE3CT-ND | 141,313 | 1 | Cut Tape | ||||||||
| TTI | SIA413DJ-T1-GE3 | 3,000 | 3K | Tape & Reel | 5h | |||||||
| TME | SIA413DJ-T1-GE3 | 0 | 1 | 16h |
Inventory History
3 month trend: -0.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SIA413DJ-T1-GE3.
Related Parts
VishaySIA414DJ-T1-GE3
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VishaySI1965DH-T1-GE3
SI1965DH-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR, 1.2 A, 12 V, 6-PIN SOT-363
Descriptions
Descriptions of Vishay SIA413DJ-T1-GE3 provided by its distributors.
Single P-Channel 12 V 0.029 Ohm Surface Mount Power Mosfet - PowerPAK SC-70-6L
Trans MOSFET P-CH 12V 10A 6-Pin PowerPAK SC-70 T/R
Power Field-Effect Transistor, 12A I(D), 12V, 0.029ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 12V 12A 19W 29mohm @ 4.5V
MOSFET P-CH 12V 12A PPAK SC70-6
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-12000mA; Drain Source Voltage, Vds:-12V; On Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
MOSFET, P CH, -12V, -12A, POWERPAK SC70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: -0.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance29 mΩ
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation19 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
Power Dissipation3.5 W
Rds On Max29 mΩ
Resistance29 mΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time70 ns
Turn-On Delay Time20 ns
Dimensions
Height750 µm
Length2.05 mm
Width2.05 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SIA413DJ-T1-GE3.
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements