onsemi FDG312P

Name: onsemi FDG312P
Brand: onsemi
SKU: FDG312P

P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

$ 0.169

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		FDG312P	77,866				0.204	0.169	0.151	10h
Flip Electronics		FDG312P	2,944							4d
Avnet		FDG312P	0	4167					0.158	3d
Farnell	2	FDG312P	0	5	Cut Tape	0.370*	0.232*	0.130*	0.125*	9h
element14 APAC	2	FDG312P	0	5	Cut Tape	0.259*	0.220*	0.160*	0.153*	2h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDG312P.

IHS

Datasheet6 pages4 years ago

Datasheet5 pages27 years ago

Upverter

Future Electronics

onsemi

element14 APAC

Inventory History

3 month trend:

+0.00%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1999-02-01

Lifecycle StatusObsolete (Last Updated: 17 hours ago)

LTB Date2020-11-13

LTD Date2021-05-13

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 17 hours ago)

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Descriptions

Descriptions of onsemi FDG312P provided by its distributors.

P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

onsemi

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Trans MOSFET P-CH 20V 1.2A 6-Pin SC-88 T/R

Verical

750mW(Ta) 8V 1.5V@ 250¦ÌA 5nC@ 4.5 V 1P 20V 180m¦¸@ 1.2A,4.5V 1.2A 330pF@10V SC-70-6,SC-88 2mm*1.25mm*1.1mm

UnikeyIC

20V P-CH. FET, 180 MO, SC70-6 <AZ

Jameco

MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V

element14 APAC

This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

Fairchild Semiconductor