Vishay SI7489DP-T1-E3

Name: Vishay SI7489DP-T1-E3
Brand: Vishay
SKU: SI7489DP-T1-E3

SI7489DP-T1-E3 P-channel Mosfet Transistor, 28 A, 100 V, 8-PIN SOIC

$ 1.477

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	73K2985	392	1		3.550	3.550	2.020	2.020	2.020	3d
Newark	2	SI7489DP-T1-E3	2,192	1	Cut Tape	3.330	3.330	2.150	2.150	2.150
Arrow Electronics		SI7489DP-T1-E3	85	1		1.932	1.573	1.173	1.173	1.173
Verical		SI7489DP-T1-E3	85	6			1.573	1.173	1.173	1.173
CoreStaff		ST63699874	1,728	1		2.656	2.251	1.690	1.634	1.634	19h

Inventory History

3 month trend: -58.86%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI7489DP-T1-E3.

Newark

Datasheet13 pages11 years ago

Datasheet13 pages10 years ago

Farnell

element14 APAC

Future Electronics

iiiC

Inventory History

3 month trend:

-58.86%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI7489DP-T1-E3

VishaySI7489DP-T1-GE3

Price @ 1000

$ 1.477

$ 1.63

Stock

328,555

428,965

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

-100 V

Continuous Drain Current (ID)

28 A

Threshold Voltage

-3 V

Rds On Max

41 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

5.2 W

Input Capacitance

4.6 nF

Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-07-21

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI7489DP-T1-E3 provided by its distributors.

SI7489DP-T1-E3 P-CHANNEL MOSFET TRANSISTOR, 28 A, 100 V, 8-PIN SOIC

RS (Formerly Allied Electronics)

Single P-Channel 100 V 0.041 Ohms Surface Mount Power Mosfet - PowerPAK SO-8

Future Electronics

MOSFET, P CHANNEL, -100V, -28A, POWERPAK SO-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:83W RoHS Compliant: No

Newark

MOSFET, P, PPAK SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-28A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:83W; Power Dissipation Pd:5.2W; Rise Time:20ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

element14 APAC