Infineon IRF7853TRPBF

Name: Infineon IRF7853TRPBF
Brand: Infineon
SKU: IRF7853TRPBF

Single N-Channel 100 V 18 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8

$ 0.728

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark		IRF7853TRPBF	2,240	1	Cut Tape	2.210	1.490	1.060	0.820	0.820
Future Electronics	2	IRF7853TRPBF	80,000	4K	Tape & Reel					0.500
Arrow Electronics	2	IRF7853TRPBF	19,155	1		1.596	1.107	0.779	0.586	0.472
DigiKey	3	IRF7853TRPBFCT-ND	6,792	1	Cut Tape	2.340	1.492	1.004	0.728	0.671
RS (Formerly Allied Electronics)		IRF7853TRPBF	0	5	Bulk		1.420	1.250	1.250	1.250	3h

Inventory History

3 month trend: +4.25%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7853TRPBF.

element14 APAC

Datasheet8 pages20 years ago

IHS

iiiC

Inventory History

3 month trend:

+4.25%

CAD Models

Download Infineon IRF7853TRPBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint
SnapEDA	Footprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-01-05

Lifecycle StatusProduction (Last Updated: 5 months ago)

Related Parts

InfineonIRF7853PBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S

Details

InfineonIRF7493PBF

MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2

Details

onsemiFDS3572

N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8

Details

InfineonIRF7854PBF

MOSFET, N Ch., 80V, 10A, 13.4 MOHM, 27 NC QG, SO-8, Pb-Free

Details

InfineonIRF7495PBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20

Details

onsemiFDS3672

MOSFET N-CH 100V 7.5A 8-SOIC / Trans MOSFET N-CH 100V 7.5A 8-Pin SOIC T/R

Details

Descriptions

Descriptions of Infineon IRF7853TRPBF provided by its distributors.

Single N-Channel 100 V 18 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 Package, SO8, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R

Verical

Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Abacus Technologies

MOSFET, N-CH, 8.3A, 100V, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0144ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.3 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 18 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 6.6 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

Distrelec