Vishay SI7439DP-T1-GE3

Name: Vishay SI7439DP-T1-GE3
Brand: Vishay
SKU: SI7439DP-T1-GE3

Trans Mosfet P-ch 150V 3A 8-PIN Powerpak So T/r / Mosfet P-ch 150V 3A Ppak SO-8

$ 2.188

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Arrow Electronics		SI7439DP-T1-GE3	35	1		3.091	2.528	1.951	1.951	1.951
Verical		SI7439DP-T1-GE3	35	4			2.528	1.951	1.951	1.951
DigiKey	2	SI7439DP-T1-GE3CT-ND	830	1	Cut Tape	5.260	3.486	2.481	2.188	2.188
TTI	2	SI7439DP-T1-GE3	30,000	3K	Tape & Reel					1.930	1h
TME	2	SI7439DP-T1-GE3	0	3K						2.020	13h

Inventory History

3 month trend: -2.60%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI7439DP-T1-GE3.

Upverter

Datasheet12 pages6 years ago

Newark

element14 APAC

Future Electronics

Farnell

Inventory History

3 month trend:

-2.60%

CAD Models

Download Vishay SI7439DP-T1-GE3 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint		Download
EE Concierge	SymbolFootprint
SnapEDA		3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

VishaySI7439DP-T1-GE3

VishaySI7439DP-T1-E3

Price @ 1000

$ 2.188

$ 2.775

Stock

266,141

240,488

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

-150 V

Continuous Drain Current (ID)

3 A

Threshold Voltage

-4 V

Rds On Max

90 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

1.9 W

Input Capacitance

Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-08-13

Lifecycle StatusProduction (Last Updated: 3 months ago)

Related Parts

VishaySI4848DY-T1-E3

Power MOSFET, N Channel, 150 V, 2.7 A, 85 MilliOhms, NSOIC, 8 Pins, Surface Mount

Details

VishaySI7898DP-T1-E3

SI7898DP-T1-E3 N-CHANNEL MOSFET TRANSISTOR, 3 A, 150 V, 8-PIN SOIC

Details

VishaySI7898DP-T1-GE3

N-Channel 150 V 85 mO 17 nC Surface Mount Power Mosfet - PowerPAK SO-8

Details

InfineonIRF7451TRPBF

Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) | MOSFET N-CH 150V 3.6A 8-SOIC

Details

onsemiFDC86244

N-Channel Shielded Gate Power Trench® MOSFET, 150 V, 2.3 A, 144 mΩ

Details

onsemiFDT86244

FDT86244 Series 150 V 128 mOhm N.Ch. SMT PowerTrench Mosfet - SOT-223-3

Details

Descriptions

Descriptions of Vishay SI7439DP-T1-GE3 provided by its distributors.

Trans MOSFET P-CH 150V 3A 8-Pin PowerPAK SO T/R / MOSFET P-CH 150V 3A PPAK SO-8

Win Source

Power MOSFET, P Channel, 150 V, 5.2 A, 0.073 ohm, PowerPAK SO, Surface Mount

Avnet

Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1.9W; No. of Pins:8Pins RoHS Compliant: No

Newark

MOSFET,P CH,DIODE,150V,5.2A,SO8 PPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.2A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.2A; Power Dissipation Pd:5.4W; Voltage Vgs Max:-20V

element14 APAC