Infineon IRF7451TRPBF

Name: Infineon IRF7451TRPBF
Brand: Infineon
SKU: IRF7451TRPBF

Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) | MOSFET N-CH 150V 3.6A 8-SOIC

$ 0.468

Production

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

10h

USD

Cut Tape

USD

USD

13h

RS (Formerly Allied Electronics)

IRF7451TRPBF

Bulk

USD

1.578

Inventory History

3 month trend: -35.17%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7451TRPBF.

element14 APAC

Datasheet8 pages22 years ago

IHS

iiiC

Inventory History

3 month trend:

-35.17%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7451TRPBF

InfineonIRF7451PBF

Price @ 1000

$ 0.468

$ 0.62

Stock

825,103

438,934

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

3.6 A

Threshold Voltage

5.5 V

Rds On Max

90 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

2.5 W

Input Capacitance

990 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-11-20

Lifecycle StatusProduction (Last Updated: 7 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

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Descriptions

Descriptions of Infineon IRF7451TRPBF provided by its distributors.

Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) | MOSFET N-CH 150V 3.6A 8-SOIC

Win Source

Power MOSFET, N Channel, 150 V, 3.6 A, 0.09 ohm, SOIC, Surface Mount

Avnet

Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R

Verical

150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:30V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

Newark

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Abacus Technologies

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell