Vishay SI7415DN-T1-GE3

Name: Vishay SI7415DN-T1-GE3
Brand: Vishay
SKU: SI7415DN-T1-GE3

Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 60V 3.6A 1212-8

$ 0.875

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	16P3845	2,850	3K						1.140	1d
Newark		SI7415DN-T1-GE3	2,850	1	Cut Tape	2.410	2.410	1.370	1.110	1.110
Arrow Electronics		SI7415DN-T1-GE3	3,000	3K						0.714
Verical		SI7415DN-T1-GE3	3,000	3K						0.698
Rutronik		LVMOS1044	3,000	3K						0.777	12h

Inventory History

3 month trend: -25.87%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI7415DN-T1-GE3.

Newark

Datasheet12 pages5 years ago

Datasheet11 pages10 years ago

Datasheet4 pages22 years ago

Datasheet11 pages11 years ago

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Upverter

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Inventory History

3 month trend:

-25.87%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI7415DN-T1-GE3

VishaySI7415DN-T1-E3

Price @ 1000

$ 0.875

Stock

741,101

1,254,566

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

-60 V

Continuous Drain Current (ID)

3.6 A

Threshold Voltage

1 V

-3 V

Rds On Max

65 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.8 W

1.5 W

Input Capacitance

Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-11-18

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Vishay SI7415DN-T1-GE3 provided by its distributors.

Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 60V 3.6A 1212-8

Win Source

Power Field-Effect Transistor, 3.6A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

IC INTERFACE SPECIALIZED 14SOIC

YIC International

P-CH -60V -5,7A 54mOhm PPAK1212-8

Rutronik

Mosfet, P Channel, 60V, 3.6A, Ppak So8; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: No |Vishay SI7415DN-T1-GE3.

Newark

MOSFET, P CH, 60V, 3.6A, PPAK SO8; Transistor Polarity:P Channel; Drain Source Voltage Vds:-60V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.6A; Power Dissipation Pd:1.5W; Voltage Vgs Max:20V

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