Vishay SI4490DY-T1-GE3

Name: Vishay SI4490DY-T1-GE3
Brand: Vishay
SKU: SI4490DY-T1-GE3

Single N-Channel 200 V 0.08 O 42 nC Surface Mount Mosfet - SOIC-8

$ 1.261

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	23T8513	1	1		4.330	2.850	2.430	1.610	1.610	5d
Newark	2	SI4490DY-T1-GE3	1	1	Cut Tape	0.358	0.358	0.358	0.358	0.358
DigiKey	3	742-SI4490DY-T1-GE3CT-ND	26	1	Cut Tape	3.760	2.457	1.714	1.392	1.392
TTI		SI4490DY-T1-GE3	7,500	2500	Tape & Reel					0.543	2h
TME	2	SI4490DY-T1-GE3	0	2500						1.030	21h

Inventory History

3 month trend: -33.72%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI4490DY-T1-GE3.

Newark

Datasheet7 pages9 years ago

Datasheet8 pages10 years ago

Farnell

element14 APAC

Future Electronics

iiiC

Inventory History

3 month trend:

-33.72%

Alternate Parts

This Part

Alternate Parts

VishaySI4490DY-T1-GE3

VishaySI4490DY-T1-E3

Price @ 1000

$ 1.261

$ 1.396

Stock

215,814

161,026

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

2.85 A

Threshold Voltage

2 V

Rds On Max

80 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

1.56 W

Input Capacitance

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-05-27

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI4490DY-T1-GE3 provided by its distributors.

Single N-Channel 200 V 0.08 O 42 nC Surface Mount Mosfet - SOIC-8

Future Electronics

1.56W(Ta) 20V 2V@ 250¦ÌA (Min) 42nC@ 10 V 1N 200V 80m¦¸@ 4A,10V 2.85A SOIC-8 4.9mm*3.9mm*1.75mm

UnikeyIC

Trans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R

Verical

MOSFET,N CH,DIODE,200V,4A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:2.85A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V

element14 APAC