Infineon IRF7450TRPBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-16
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2020-01-31
LTD Date2021-07-31
Related Parts
InfineonIRF7451TRPBF
Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) | MOSFET N-CH 150V 3.6A 8-SOIC
Diodes Inc.ZXMP6A17N8TC
Single P-Channel 60 V 0.19 Ohm 9 nC 2.5 mW Silicon SMT Mosfet - SOIC-8
VishaySI9407BDY-T1-GE3
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
InfineonIRF7458TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 6.3Milliohms;ID 14A;SO-8;PD 2.5W;VGS +/-30V
Descriptions
Descriptions of Infineon IRF7450TRPBF provided by its distributors.
Single N-Channel 200 V 0.17 Ohm 39 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC T/R
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:2.5A; On Resistance, Rds(on):170mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance940 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance170 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max170 mΩ
Resistance170 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time17 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)200 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements