Vishay SI4288DY-T1-GE3

Transistor MOSFET Array Dual N-CH 40V 9.2A 8-Pin SOIC T/R
$ 0.706
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI4288DY-T1-GE3.

Farnell

Datasheet9 pages9 years ago

Newark

IHS

Upverter

TME

Inventory History

3 month trend:
-34.57%

CAD Models

Download Vishay SI4288DY-T1-GE3 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3DDownload
EE Concierge
SymbolFootprint
SnapEDA
3DDownload
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginUSA
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-10
Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

Trans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SOIC N T/R / MOSFET N/P-CH 40V 8A 8SO
InfineonIRF7902TRPBF
Transistor MOSFET Array Dual N-CH 30V 6.4A/9.7A 8-Pin SOIC T/R
InfineonIRF7907TRPBF
Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R
InfineonIRF7904TRPBF
Dual N-Channel 30 V 16.2 mOhm 7.5 nC HEXFET® Power Mosfet - SOIC-8
Diodes Inc.DMN3024LSD-13
Mosfet, Dual, N-Ch, 30V, 6.8A Rohs Compliant: Yes |Diodes Inc. DMN3024LSD-13
Diodes Inc.DMG4822SSD-13
Dual N-Channel 30 V 1.42 W 10.5 nC Enhancement Mode Mosfet - SOIC-8

Descriptions

Descriptions of Vishay SI4288DY-T1-GE3 provided by its distributors.

Transistor MOSFET Array Dual N-CH 40V 9.2A 8-Pin SOIC T/R
Avnet Japan
2W 20V 2.5V@ 250¦ÌA 15nC@ 10V 2N 40V 20m¦¸@ 10A,10V 9.2A 580pF@20V SOIC-8 1.75mm
Small Signal Field-Effect Transistor, 9.2A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:40V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:9.2A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes
MOSFET, NN CH, W/D, 40V, 9.2A, SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:40V; Module Configuration:Dual; On Resistance Rds(on):0.0165ohm; Power Dissipation Pd:3.1W

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • Vishay Thin Film
  • Vishay Intertechnology
  • VISHA
  • Vishay Semiconductors
  • VISAHY
  • Vishay Intertech
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • Vishay Intertechnologies
  • Vishay General Semiconductor - Diodes Division
  • Vishay Semiconductor Opto Division
  • VSHAY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY ELECTRONIC
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY OPTO
  • VISHAY FOIL RESISTORS
  • Vishay Polytech
  • Vishay Semiconductor
  • Vishay Sfernice
  • Vishay Siliconix
  • Vishay Dale
  • Vishay BCcomponents
  • Vishay Angstrohm
  • Vishay Draloric

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI4288DY-T1-GE3.