Infineon IRF7907TRPBF

Name: Infineon IRF7907TRPBF
Brand: Infineon
SKU: IRF7907TRPBF

Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R

$ 0.467

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Distributor		SKU		Min	Pkg
Newark	2	IRF7907TRPBF	517	1	Cut Tape	0.458	0.458	0.458	0.458	0.458
Arrow Electronics	2	IRF7907TRPBF	6,457	1		1.296	0.858	0.618	0.464	0.374
Rutronik		STDMOS1435	4,000	4K						0.417	21h
DigiKey	3	IRF7907TRPBFCT-ND	80,938	1	Cut Tape	1.560	0.985	0.654	0.467	0.428
Future Electronics	2	IRF7907TRPBF	0	4K	Tape & Reel					0.460

Inventory History

3 month trend: -15.75%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet10 pages17 years ago

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Inventory History

3 month trend:

-15.75%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7907TRPBF provided by its distributors.

Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R

Avnet Japan

Dual N-Channel 30 V 20.5/13.7 mOhm 10/21 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS

Infineon SCT

MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8

Newark

Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET

Infineon

Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

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