Vishay SI4164DY-T1-GE3

Name: Vishay SI4164DY-T1-GE3
Brand: Vishay
SKU: SI4164DY-T1-GE3

Single N-Channel 30 V 0.0032 Ohm Surface Mount Power Mosfet - SOIC-8

$ 0.758

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Newark	2	SI4164DY-T1-GE3	1,284	1	Cut Tape	1.760	1.340	0.971	0.775	0.775
DigiKey	2	SI4164DY-T1-GE3CT-ND	91	1	Cut Tape	2.320	1.486	1.008	0.738	0.738
TTI		SI4164DY-T1-GE3	7,500	2500	Tape & Reel					0.560	1d
TME	2	SI4164DY-T1-GE3	0	2500						0.658	19h
Avnet		SI4164DY-T1-GE3	0	2500						0.569	5d

Inventory History

3 month trend: -42.46%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI4164DY-T1-GE3.

Farnell

Datasheet9 pages9 years ago

Datasheet10 pages13 years ago

Datasheet10 pages11 years ago

Datasheet10 pages12 years ago

IHS

Newark

element14 APAC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-42.46%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-09-03

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI4164DY-T1-GE3 provided by its distributors.

Single N-Channel 30 V 0.0032 Ohm Surface Mount Power Mosfet - SOIC-8

Future Electronics

N-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

Farnell