Vishay SI2365EDS-T1-GE3
$ 0.139
Production
Inventory History
3 month trend: -84.23%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SI2365EDS-T1-GE3.
CAD Models
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Descriptions
Descriptions of Vishay SI2365EDS-T1-GE3 provided by its distributors.
Power MOSFET, P Channel, 20 V, 5.9 A, 0.0265 ohm, SOT-23, Surface Mount
SI2365EDS-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 4.7 A, 20 V, 3-PIN TO-236
Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P-CH, -20V, -5.9A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.9A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0265ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: -84.23%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.9 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time21 µs
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1 W
Rds On Max32 mΩ
Rise Time32 µs
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time65 ns
Turn-On Delay Time9 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SI2365EDS-T1-GE3.
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements