Texas Instruments CSD16407Q5

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.3 mOhm 8-VSON-CLIP -55 to 150
$ 0.846
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Texas Instruments CSD16407Q5.

Texas Instruments

Technical Drawing4 pages2 years ago
Official datasheet0 pages0 years ago
Technical Drawing2 pages2 years ago
Datasheet11 pages11 years ago
Technical Drawing2 pages14 years ago
Datasheet12 pages15 years ago

Farnell

Augswan

Newark

iiiC

Inventory History

3 month trend:
-5.84%

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Alternate Parts

Price @ 1000
$ 0.846
$ 0.963
Stock
481,266
144,116
Authorized Distributors
4
2
Mount
Surface Mount
Surface Mount
Case/Package
QFN
-
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
100 A
100 A
Threshold Voltage
1.6 V
-
Rds On Max
2.4 mΩ
2.4 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
3.1 W
3.1 W
Input Capacitance
2.66 nF
2.66 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 6 days ago)

Engineering Resources

View Evaluation kits and Reference designs for Texas Instruments CSD16407Q5.

Related Parts

25V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package, PG-TDSON-8, RoHS
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
N CH POWER MOSFET, HEXFET, 30V, 23A, PQFN-8; Transistor Polarity:N Channel; Cont
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package

Descriptions

Descriptions of Texas Instruments CSD16407Q5 provided by its distributors.

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.3 mOhm 8-VSON-CLIP -55 to 150
the nexfet power mosfet has been designed to minimize losses in power conversion applications.
Trans MOSFET N-CH 25V 31A 8-Pin SON EP T/R / MOSFET N-CH 25V 100A 8-SON
FET, N CH, SINGLE, 25V, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.8mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Package / Case:SON; Power Dissipation Pd:3.1W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V

Manufacturer Aliases

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  • TEXAS
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  • Texas Instruments Inc.