STMicroelectronics STP7NM80
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STP7NM80 | 0 | 1 | 6h | ||||||||
| Microchip USA | STP7NM80 | 331 | 600 | Tray | 2d | |||||||
| Win Source | WS-STP7NM80 | 58,000 | 25 | 9h | ||||||||
| Worldway Electronics | STP7NM80 | 27,837 | 7 | Tube | 1d | |||||||
| Esaler Electronic | STP7NM80 | 1,000 | 3d |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP7NM80.
CAD Models
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|---|---|---|---|
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-09-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-01-10
LTD Date2021-07-10
Descriptions
Descriptions of STMicroelectronics STP7NM80 provided by its distributors.
N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220 package
STP7NM80 N-channel MOSFET Transistor, 6.5 A, 800 V, 3-Pin TO-220
Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 800V, 6.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.25A; Drain Source Voltage Vds:800V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:90W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.5A; Package / Case:TO-220; Power Dissipation Pd:90W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.05 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance620 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max1.05 Ω
Resistance1.05 Ω
Rise Time8 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time20 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP7NM80.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant