STMicroelectronics STP9NK60Z
$ 1.156
Production
Inventory History
3 month trend: +3.52%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP9NK60Z.
CAD Models
Download STMicroelectronics STP9NK60Z symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 Ultra Librarian | SymbolFootprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
STMicroelectronicsSTP10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
Descriptions
Descriptions of STMicroelectronics STP9NK60Z provided by its distributors.
N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
STP9NK60Z N-CHANNEL MOSFET TRANSISTOR, 7 A, 600 V, 3-PIN TO-220
Power MOSFET, N Channel, 600 V, 3.5 A, 0.85 ohm, TO-220, Through Hole
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB Tube
N CHANNEL 600V, 0.85 OHM, 7A TO-220 ZENER, PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 7A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +3.52%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.11 nF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max950 mΩ
Rise Time17 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time43 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)600 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP9NK60Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant