STMicroelectronics STI18N65M5
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STI18N65M5 | 0 | 1K | 3d | ||||||||
| Microchip USA | STI18N65M5 | 139 | 150 | Tray | 4d | |||||||
| Component Stockers USA | STI18N65M5 | 328 | >1wk | |||||||||
| Worldway Electronics | STI18N65M5 | 29,920 | 7 | Tube | 2d | |||||||
| Aztech | STI18N65M5 | 12,286 | 3d |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STI18N65M5.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
Related Parts
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N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in I2PAK package
STMicroelectronicsSTFI20N65M5
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in I2PAKFP package
Descriptions
Descriptions of STMicroelectronics STI18N65M5 provided by its distributors.
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in I2PAK package
Trans MOSFET N-CH 650V 15A 3-Pin TO-262 Tube
MOSFET N CH 650V 15A I2PAK
Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET 650V 0.279 OHM
CAP CER 1000PF 1KV 10% RADIAL
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.24 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max220 mΩ
Rise Time7 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time36 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STI18N65M5.
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant