STMicroelectronics STI20N65M5
$ 1.263
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Min
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Inventory History
3 month trend: -6.27%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STI20N65M5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-02-01
Lifecycle StatusProduction (Last Updated: 3 months ago)
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MOSFET N-CH 600V 20.2A TO262-3 N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO262-3
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Descriptions
Descriptions of STMicroelectronics STI20N65M5 provided by its distributors.
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in I2PAK package
MOSFET N-CH 650V 18A I2PAK / N-Channel 650 V 18A (Tc) 130W (Tc) Through Hole I2PAK (TO-262)
Power Mosfet, N Channel, 18A, To-262-3; |Stmicroelectronics STI20N65M5
Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
130W(Tc) 25V 5V@ 250µA 36nC@ 10 V 1individualNChannel 650V 190mΩ@ 9A,10V 18A 1.434nF@100V I2PAK，TO-262 Through hole mounting
POWER MOSFET, N CHANNEL, 18A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -6.27%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time7.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.434 nF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation130 W
Rds On Max190 mΩ
Rise Time7.5 ns
Schedule B8541290080
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STI20N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant