onsemi NDT014

Name: onsemi NDT014
Brand: onsemi
SKU: NDT014

N-Channel Enhancement Mode Field Effect Transistor 60V, 2.7A, 0.2Ω

$ 0.434

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Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Verical	5	NDT014	3,441	4			0.447	0.441	0.430	0.363
Arrow Electronics	2	NDT014	3,441	1		0.458	0.447	0.441	0.430	0.409
Rochester Electronics		NDT014	26,262					0.503	0.418	0.373	10h
DigiKey	3	NDT014CT-ND	15,361	1	Cut Tape	1.660	1.052	0.701	0.502	0.462
Newark		NDT014	0	4K	Tape & Reel					0.460

Inventory History

3 month trend: -2.23%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NDT014.

IHS

Datasheet7 pages3 years ago

Datasheet0 pages0 years ago

Upverter

element14 APAC

Future Electronics

onsemi

Inventory History

3 month trend:

-2.23%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1995-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi NDT014 provided by its distributors.

N-Channel Enhancement Mode Field Effect Transistor 60V, 2.7A, 0.2Ω

onsemi

Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R

Fly-Wing Technology

60V N-Fet 200 Mo Sot223 Rohs Compliant: Yes

Newark

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

60V 2.7A 180m´Î@10V1.6A 3W 3V@250uA 15pF@25V N Channel 155pF@25V 5nC@10V -65¡Í~+150¡Í@(Tj) SOT-223 MOSFETs ROHS

Dasenic

POWER FIELD-EFFECT TRANSISTOR, 2

DigiKey Marketplace

MOSFETs N-Channel FET Enhancement Mode

Mouser

MOSFET, N SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Package / Case:SOT-223; Power Dissipation Pd:3W; Power Dissipation Pd:3W; Pulse Current Idm:10A; SMD Marking:014; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Fairchild Semiconductor