onsemi NDF10N60ZH

Name: onsemi NDF10N60ZH
Brand: onsemi
SKU: NDF10N60ZH

Power MOSFET 600V 10A 0.75 Ù Single N-Channel TO-220FP Optimized

$ 0.672

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Verical	4	NDF10N60ZH	41,706	464				0.672	0.599
Rochester Electronics		NDF10N60ZH	197,464				0.647	0.537	0.479	18m
RS (Formerly Allied Electronics)		NDF10N60ZH	0	10	Bulk	1.200	1.060	1.060	1.060	13h
Farnell		NDF10N60ZH.	0	5		1.180*	0.842*	0.585*	0.570*	1d
Microchip USA		NDF10N60ZH	194	3K	Tube				0.648	1d

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NDF10N60ZH.

IHS

Datasheet8 pages11 years ago

Farnell

onsemi

Newark

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiNDF10N60ZH

onsemiNDF10N60ZG

Price @ 1000

$ 0.672

$ 0.644

Stock

1,161,811

838,586

Authorized Distributors

Mount

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

6 A

Threshold Voltage

3.9 V

Rds On Max

750 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

39 W

36 W

Input Capacitance

1.645 nF

Supply Chain

Country of OriginVietnam

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-04-07

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2017-12-15

LTD Date2018-03-01

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Descriptions

Descriptions of onsemi NDF10N60ZH provided by its distributors.

Power MOSFET 600V 10A 0.75 Ù Single N-Channel TO-220FP Optimized

onsemi

NDF10N60ZH N-CHANNEL MOSFET TRANSISTOR, 10 A, 600 V, 3-PIN TO-220FP

RS (Formerly Allied Electronics)

Tube Through Hole N-Channel Single Mosfet Transistor 10A Tc 10A 39W 23ns

Fly-Wing Technology

Power Field-Effect Transistor, 6A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH, 600V, 10A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.9V; P

Farnell